Search results for " Photoluminescence"

showing 10 items of 77 documents

Structure, morphology and photoluminescence emissions of ZnMoO4: RE 3+=Tb3+ - Tm3+ - X Eu3+ (x = 1, 1.5, 2, 2.5 and 3 mol%) particles obtained by the…

2018

Made available in DSpace on 2018-12-11T17:36:34Z (GMT). No. of bitstreams: 0 Previous issue date: 2018-06-25 Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) Ministerio de Economía y Competitividad ZnMoO4 and ZnMoO4: RE3+ = 1% Tb3+, 1% Tm3+, x Eu3+ (x = 1, 1.5, 2, 2.5 and 3 mol%) particles were prepared by a sonochemical method. The influence of the dopant content on photoluminescent behavior was investigated. The X-ray diffraction results confirmed the formation of the α-ZnMoO4 phase with a triclinic crystalline structure. The influence of th…

- Tm3+- Eu3+PhotoluminescenceMaterials scienceEu3+Tm3+Band gapAnalytical chemistryPhosphor02 engineering and technologyTriclinic crystal system010402 general chemistry01 natural sciencesSonochemical method PhotoluminescenceTb3+Materials ChemistrySINTERIZAÇÃOPhotoluminescenceQuenchingDopantMechanical EngineeringMetals and AlloysTb3+ [ZnMoO4]021001 nanoscience & nanotechnology0104 chemical sciencesMechanics of MaterialsDensity functional theoryZnMoO4Wulff constructionSonochemical method0210 nano-technology
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Rhodamine (B) photocatalysis under solar light on high crystalline ZnO films grown by home-made DC sputtering

2018

Abstract ZnO thin films were deposited by home-made DC sputtering of zinc target under mixed gases (Argon, Oxygen) plasma on glass substrates. Films were deposited by varying oxygen partial pressure (PO2) from 0.09 to 1.3 mbar in the deposition chamber, at a fixed substrate temperature of 100 °C. The samples were characterized by photoluminescence (PL), X-ray diffraction (XRD), optical transmissions (UV–vis), scanning electron microscopy (SEM) and electrical (Hall effect) measurements. The results indicate that by varying the oxygen pressure in the deposition chamber, the films show a precise and well defined photoluminescence emissions for each range of pressure covering almost the entire …

010302 applied physicsMaterials sciencePhotoluminescenceZnO thin films Sputtering Photoluminescence Rhodamine (B) Solar light PhotocatalysisScanning electron microscopeBand gapAnalytical chemistry02 engineering and technologySubstrate (electronics)021001 nanoscience & nanotechnology01 natural sciencesSettore ING-INF/01 - ElettronicaAtomic and Molecular Physics and OpticsElectronic Optical and Magnetic Materialschemistry.chemical_compoundchemistrySputtering0103 physical sciencesPhotocatalysisRhodamine BElectrical and Electronic EngineeringThin film0210 nano-technology
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Emerging switchable ultraviolet photoluminescence in dehydrated Zn/Al layered double hydroxide nanoplatelets

2019

AbstractLayered double hydroxides show intriguing physical and chemical properties arising by their intrinsic self-assembled stacking of molecular-thick 2D nanosheets, enhanced active surface area, hosting of guest species by intercalation and anion exchanging capabilities. Here, we report on the unprecedented emerging intense ultraviolet photoluminescence in Zn/Al layered double hydroxide high-aspect-ratio nanoplatelets, which we discovered to be fully activated by drying under vacuum condition and thermal desorption as well. Photoluminescence and its quenching were reproducibly switched by a dehydration–hydration process. Photoluminescence properties were comprehensively evaluated, such a…

0301 basic medicineMaterials sciencePhotoluminescenceCoprecipitationIntercalation (chemistry)Thermal desorptionlcsh:Medicineswitchable ultraviolet photoluminescenceengineering.materialTwo-dimensional materialsArticle03 medical and health scienceschemistry.chemical_compound0302 clinical medicine2D materials Layered Double Hydroxides Photoluminescence Vacuumlcsh:ScienceQuenchingMultidisciplinaryZn/Al layered double hydroxideX-ray Diffractionlcsh:RSettore FIS/01 - Fisica SperimentaleLayered double hydroxidesExfoliation joint030104 developmental biologychemistryChemical engineeringengineeringHydroxidelcsh:Q030217 neurology & neurosurgeryScientific Reports
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Physical–chemical properties of biogenic selenium nanostructures produced by stenotrophomonas maltophilia SeITE02 and ochrobactrum sp. MPV1

2018

Stenotrophomonas maltophilia SeITE02 and Ochrobactrum sp. MPV1 were isolated from the rhizosphere soil of the selenium-hyperaccumulator legume Astragalus bisulcatus and waste material from a dumping site for roasted pyrites, respectively. Here, these bacterial strains were studied as cell factories to generate selenium-nanostructures (SeNS) under metabolically controlled growth conditions. Thus, a defined medium (DM) containing either glucose or pyruvate as carbon and energy source along with selenite (SeO23−) was tested to evaluate bacterial growth, oxyanion bioconversion and changes occurring in SeNS features with respect to those generated by these strains grown on rich media. Transmissi…

0301 basic medicineMicrobiology (medical)biogenic nanomaterialsOchrobactrum sp. MPV1030106 microbiologyPopulationlcsh:QR1-502NanorodBacterial growthSettore BIO/19 - Microbiologia GeneraleMicrobiologyFluorescence spectroscopylcsh:Microbiology03 medical and health sciencesSeleniumNanoparticleExtracellulareducationPhotoluminescenceOriginal Researcheducation.field_of_studyStrain (chemistry)ChemistryFluorescenceStenotrophomonas maltophilia SeITE02Chemically defined medium030104 developmental biologybiogenic nanomaterials selenium selenite nanoparticles nanorods Stenotrophomonas maltophilia SeITE02 Ochrobactrum sp. MPV1 photoluminescenceSeleniteBiophysicsnanoparticlesBiogenic nanomaterialEnergy sourcenanorods
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Amplified spontaneous emission in thin films of quasi-2D BA3MA3Pb5Br16 lead halide perovskites

2021

Quasi-2D (two-dimensional) hybrid perovskites are emerging as a new class of materials with high photoluminescence yield and improved stability compared to their three-dimensional (3D) counterparts. Nevertheless, despite their outstanding emission properties, few studies have been reported on amplified spontaneous emission (ASE) and a thorough understanding of the photophysics of these layered materials is still lacking. In this work, we investigate the ASE properties of multilayered quasi-2D BA3MA3Pb5Br16 films through the dependence of the photoluminescence on temperature and provide a novel insight into the emission processes of quasi-2D lead bromide perovskites. We demonstrate that the …

Amplified spontaneous emissionPhotoluminescenceMaterials sciencequasi-2D perovskite Amplified spontaneous emission PhotoluminescenceHalideLaserlaw.inventionChemical physicslawPhase (matter)General Materials ScienceThin filmAbsorption (electromagnetic radiation)MaterialsExcitation
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Core-shell Zn-doped TiO2-ZnO nanofibers fabricated via a combination of electrospinning and metal-organic chemical vapour deposition

2010

Zn-doped TiO2 nanofibers shelled with ZnO hierarchical nanoarchitectures have been fabricated combining electrospinning of TiO2 (anatase) nanofibers and metal-organic chemical vapor deposition (MOCVD) of ZnO. The proposed hybrid approach has proven suitable for tailoring both the morphology of the ZnO external shell as well as the crystal structure of the Zn-doped TiO2 core. It has been found that the Zn dopant is incorporated in calcined electrospun nanofibers without any evidence of ZnO aggregates. Effects of different Zn doping levels of Zn-doped TiO2 fibers have been scrutinized and morphological, structural, physico-chemical and optical properties evaluated before and after the hierarc…

AnataseMaterials scienceSettore ING-IND/22 - Scienza e Tecnologia dei MaterialiNanotechnologyCathodoluminescenceChemical vapor depositionNANOWIRESNANOSTRUCTURESZN-DOPINGTITANIA; ELECTROSPINNING; NANOFIBERS; CHEMICAL VAPOUR DEPOSITION ZN-DOPINGROUTEXPSGeneral Materials ScienceMetalorganic vapour phase epitaxyZINC-OXIDENanocompositeDopantELECTROSPINNINGPHOTOCATALYTIC ACTIVITYGeneral ChemistryOPTICAL-PROPERTIESCondensed Matter PhysicsNANOCOMPOSITESElectrospinningCHEMICAL VAPOUR DEPOSITIONNanofiberTITANIAPHOTOLUMINESCENCESENSITIZED SOLAR-CELLSSENSITIZED SOLAR-CELLS; ZINC-OXIDE; PHOTOCATALYTIC ACTIVITY; OPTICAL-PROPERTIES; PHOTOLUMINESCENCE; NANOSTRUCTURES; NANOCOMPOSITES; NANOWIRES; ROUTE; XPSNANOFIBERS
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Vibronic structures in the visible luminescence of silica nanoparticles

2014

Time resolved photoluminescence investigation in air and in vacuum atmosphere of the visible luminescence related to silica surface defects is here reported. Two contributions can be singled out: one, observed both in air and in vacuum, is the well-known blue band, peaked around 2.8 eV decaying in ∼5 ns; the other, only observed in vacuum, is a structured emission in the violet range characterized by two vibronic progressions spaced 1370 cm−1 and 360 cm−1 decaying in ∼100 ns. In contrast with previous attribution, the well distinguishable spectroscopic properties together with the observation of the effects induced by the interaction with nitrogen allow to state that the emission bands orig…

AtmosphereSilica nanoparticlesRange (particle radiation)PhotoluminescencechemistrySilica nanoparticles defects phonon-coupling photoluminescencechemistry.chemical_elementNanoparticleAtomic physicsLuminescenceNitrogenBlue bandAIP Conference Proceedings
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Residual strain effects on the two-dimensional electron gas concentration of AlGaN/GaN heterostructures

2001

Ga-face AlGaN/GaN heterostructures with different sheet carrier concentrations have been studied by photoluminescence and Raman spectroscopy. Compared to bulk GaN, an energy shift of the excitonic emission lines towards higher energies was observed, indicating the presence of residual compressive strain in the GaN layer. This strain was confirmed by the shift of the E2 Raman line, from which biaxial compressive stresses ranging between 0.34 and 1.7 GPa were deduced. The spontaneous and piezoelectric polarizations for each layer of the heterostructures have been also calculated. The analysis of these quantities clarified the influence of the residual stress on the sheet electron concentratio…

Electron densityTwo-dimensional electron gasMaterials sciencePhotoluminescenceIII-V semiconductorsAluminium compounds ; Gallium compounds ; III-V semiconductors ; Wide band gap semiconductors ; Semiconductor heterojunctions ; Two-dimensional electron gas ; Electron density ; Internal stresses ; Photoluminescence ; Raman spectra ; Excitons ; Interface states ; Piezoelectric semiconductors ; Dielectric polarisationExcitonAnalytical chemistryGeneral Physics and AstronomyDielectric polarisationMolecular physicsCondensed Matter::Materials Sciencesymbols.namesakeResidual stress:FÍSICA [UNESCO]Emission spectrumPiezoelectric semiconductorsPhotoluminescenceAluminium compoundsUNESCO::FÍSICAWide-bandgap semiconductorGallium compoundsHeterojunctionInterface statesWide band gap semiconductorssymbolsExcitonsRaman spectraSemiconductor heterojunctionsRaman spectroscopyInternal stressesElectron density
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Multiexciton complex from extrinsic centers in AlGaAs epilayers on Ge and Si substrates

2013

The multiexciton properties of extrinsic centers from AlGaAs layers on Ge and Si substrates are addressed. The two photon cascade is found both in steady state and in time resolved experiments. Polarization analysis of the photoluminescence provides clearcut attribution to neutral biexciton complexes. Our findings demonstrate the prospect of exploiting extrinsic centers for generating entangled photon pairs on a Si based device. © 2013 AIP Publishing LLC.

GaAs Molecular Beam Epitaxy quantum nanostructures photoluminescenceMaterials sciencePhotoluminescencePhotonbusiness.industryQuantum dotsGeneral Physics and AstronomySemiconductorPolarization (waves)Gallium arsenidechemistry.chemical_compoundSemiconductorchemistryQuantum dotOptoelectronicsbusinessBiexcitonSingle photonsMolecular beam epitaxy
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Correlation between optical properties and barrier composition in InxGa1−xP/GaAs quantum wells

1998

9 páginas, 11 figuras.

III-V semiconductorsPhotoluminescenceMaterials scienceBand gapExcitonAlloyGeneral Physics and Astronomyengineering.materialGallium arsenideSpectral line broadeningchemistry.chemical_compoundCondensed Matter::Materials ScienceGallium arsenideIndium compounds:FÍSICA [UNESCO]Optical constantsInterface structureFluctuationsSemiconductor quantum wellsPhotoluminescenceQuantum wellCondensed matter physicsCondensed Matter::OtherGallium compoundsUNESCO::FÍSICAHeterojunctionInterface statesCondensed Matter::Mesoscopic Systems and Quantum Hall EffectStoichiometryEnergy gapchemistryIndium compounds ; Gallium compounds ; III-V semiconductors ; Gallium arsenide ; Semiconductor quantum wells ; Interface structure ; Photoluminescence ; Excitons ; Interface states ; Fluctuations ; Stoichiometry ; Spectral line broadening ; Energy gap ; Optical constantsengineeringExcitonsMolecular beam epitaxy
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